The Northrop Grumman Space Technology foundry, located in Redondo Beach, California, processes commercial volumes of hetero-junction bipolar transistor (HBT) and high electron mobility transistor (HEMT) monolithic microwave and millimeter wave integrated circuits (MMICs). Our high-performance circuits are used in established and emerging commercial markets, including cellular and broadband wireless systems, and cutting-edge aerospace & defense and scientific applications.
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We Offer: |
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Advanced process technologies that enable differentiating MMIC and system performance |
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In-house multi-wafer Molecular Beam Epitaxy (MBE) for precision control of device doping profiles |
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Process Design Kits with synchronized layout and model sets optimized to millimeter wave, low noise and power applications |
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Mature and reliable processes |
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Stability of defense critical DoD ?Trusted? foundry |
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100mm volume wafer fabrication facilities |
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Multi-customer shared mask foundry runs |
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On-wafer RF testing beyond 110 GHz | |
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Emerging Technologies |
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Process Technology Overview:
| Parameter / Technology |
1 um GaAs HBT |
0.8 um Digital
InP HBT |
1 um Power
InP HBT |
0.15 um
GaAs HEMT |
0.10 um
GaAs HEMT |
0.10 um
InP HEMT |
| Ft (peak) |
40 GHz |
140 GHz |
80 GHz |
80 GHz |
120 GHz |
180 GHz |
| Fmax (peak) |
70 GHz |
150 GHz |
150 GHz |
200 GHz |
250 GHz |
350 GHz |
| Beta / Gm |
400 |
50 |
25 |
550 mS/mm |
650 mS/mm |
900 mS/mm |
| Breakdown |
>13V
BV CEO |
>4V
BV CEO |
>13V
BV CEO |
13V
BV gdr |
7.5V
BV gdr |
2.5V
BV gdr |
| Wafer Thickness |
100 um |
75 um |
75 um |
50 & 100 um |
50 & 100 um |
75 um |
| Airbridged Metal |
Yes |
Yes |
Yes |
Yes |
Yes |
Yes |
| Backside Vias |
Yes |
Yes |
Yes |
Yes |
Yes |
Yes |
| Diode Type |
ESD &
Schottky |
Schottky |
Schottky |
Gate Source |
Gate Source |
Gate Source | |
For more information on Velocium's foundry services please download the Foundry Services brochure: PDF format (150Kb)
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